a p9924ago-hf advanced power dual n-channel enhancement electronics corp. mode power mosfet low on-resistance bv dss 20v capable of 2.5v gate drive r ds(on) 22m halogen free & rohs compliant product i d 5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 150 /w data and specifications subject to change without notice thermal data parameter 1 200907161 storage temperature range -55 to 150 operating junction temperature range -55 to 150 continuous drain current 3 5 total power dissipation 0.83 continuous drain current 3 4 pulsed drain current 1 20 drain-source voltage 20 gate-source voltage + 8 halogen-free product parameter rating a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. d s2 s2 g2 d s1 s1 g1 tssop-8 g2 d s2 g1 d s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =5a - - 22 m ? ? 0.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =2a, v gs =0v, - 18.5 - ns q rr reverse recovery charge di/dt=100a/s - 9 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 250 : /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP9924AGO-HF
a p9924ago-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 10 14 18 22 26 30 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =3a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v g =4.5v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 10 20 30 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 4.5v 3.5v 2.5v v g = 2.0 v 0 10 20 30 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 4.5v 3.5v 2.5v v g = 2.0 v
ap9924ago-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2 4 6 8 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =16v i d =5a 0 100 200 300 400 500 1 5 9 13172125 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =250 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on)
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